N-channel Power MOSFET, 30V drain-source voltage, 19A continuous drain current. Features TrenchFET process technology and a single Quad Drain Triple Source configuration. Housed in an 8-pin PowerPAK 1212 EP surface-mount package with dimensions of 3.05mm x 3.05mm x 1.07mm (Max). Offers low 6mΩ drain-source resistance at 10V and a maximum power dissipation of 3800mW.
PackagePowerPAK 1212 EP
MountingSurface Mount
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Technical Specifications
Vishay SiS402DN technical specifications.
General
| Package/Case | PowerPAK 1212 EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 1.07(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 19A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 6@10VmOhm |
| Typical Gate Charge @ Vgs | 28@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 28nC |
| Typical Input Capacitance @ Vds | 1700@15VpF |
| Maximum Power Dissipation | 3800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 350pF |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiS402DN Datasheet
Download the complete datasheet for Vishay SiS402DN to view detailed technical specifications.
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