The SIS407ADN-T1-GE3 is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 39.1W and is packaged in a halogen-free and RoHS-compliant 1212-8 plastic package. The transistor is lead-free and RoHS compliant, and has a maximum drain to source voltage of -20V and a maximum continuous drain current of -18A.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SIS407ADN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -18A |
| Drain to Source Resistance | 7.3mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 5.875nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS407ADN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS407ADN-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.