P-channel MOSFET with a 20V drain-source voltage (Vdss) and 15.4A continuous drain current (ID). Features low on-resistance of 8.2mR (typical) and 9.5mR (max), with a threshold voltage of -400mV. Operates across a wide temperature range from -55°C to 150°C, supporting a maximum power dissipation of 33W. This surface-mount component is packaged in Tape and Reel, offering fast switching with turn-on delay of 23ns and fall time of 38ns.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIS407DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
-25A
Drain to Source Resistance
8.2mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
9.5mR
Fall Time
38ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
2.76nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
33W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
9.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-400mV
Turn-Off Delay Time
92ns
Turn-On Delay Time
23ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIS407DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS407DN-T1-GE3 to view detailed technical specifications.
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