N-channel MOSFET, 20V Vdss, 35A continuous drain current, and 4.8mR maximum drain-source on-resistance. Features a 1.2V threshold voltage, 1.6nF input capacitance, and fast switching times with 25ns turn-on and 30ns turn-off delays. Operates from -55°C to 150°C with 5.2W maximum power dissipation. Surface mountable in a 3.05mm x 3.05mm x 1.04mm PowerPAK 1212 package, supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS410DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
35A
Drain to Source Resistance
5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
4.8mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
1.6nF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.2W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
4.8mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
30ns
Turn-On Delay Time
25ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIS410DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS410DN-T1-GE3 to view detailed technical specifications.
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