P-Channel Power MOSFET featuring a -30V drain-to-source breakdown voltage and a low 9.4mΩ drain-to-source resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of -18A and a maximum power dissipation of 52W. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C, with a gate-to-source voltage of 20V and a threshold voltage of -2.5V. Key switching characteristics include an 8ns fall time and a 45ns turn-off delay time, with an input capacitance of 4.28nF. This RoHS compliant component is supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power52W
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Technical Specifications
Vishay SIS413DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
-18A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
9.4mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.28nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
52W
Radiation Hardening
No
Rds On Max
9.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2.5V
Turn-Off Delay Time
45ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIS413DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS413DN-T1-GE3 to view detailed technical specifications.
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