P-Channel Power MOSFET featuring a -30V drain-to-source breakdown voltage and a low 9.4mΩ drain-to-source resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of -18A and a maximum power dissipation of 52W. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C, with a gate-to-source voltage of 20V and a threshold voltage of -2.5V. Key switching characteristics include an 8ns fall time and a 45ns turn-off delay time, with an input capacitance of 4.28nF. This RoHS compliant component is supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power52W
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Technical Specifications
Vishay SIS413DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -18A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 9.4mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.28nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 9.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -2.5V |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS413DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS413DN-T1-GE3 to view detailed technical specifications.
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