The SIS424DN-T1-GE3 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 39W and a maximum drain to source voltage of 20V. The device has a continuous drain current of 35A and a drain to source resistance of 7.1mR. It also features a turn-off delay time of 20ns and a turn-on delay time of 15ns.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS424DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 7.1mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.2nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6.4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS424DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS424DN-T1-GE3 to view detailed technical specifications.
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