N-channel MOSFET transistor for surface mount applications. Features 20V drain-source voltage and 35A continuous drain current. Offers low on-resistance of 4.5mR (max) and 4.6mR. Includes fast switching times with turn-on delay of 21ns and fall time of 17ns. Operates across a wide temperature range from -55°C to 150°C with 3.7W power dissipation. Packaged in tape and reel for automated assembly.
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
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Technical Specifications
Vishay SIS426DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
35A
Drain to Source Resistance
4.6mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
4.5mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.57nF
Lead Free
Lead Free
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.7W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.7W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
29ns
Turn-On Delay Time
21ns
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIS426DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS426DN-T1-GE3 to view detailed technical specifications.
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