P-channel MOSFET with -30V drain-source voltage and -50A continuous drain current. Features low 10.6mΩ Rds(on) at -10V Vgs and 17.7mΩ drain-to-source resistance. Operates with a 25V gate-to-source voltage, exhibiting 45ns turn-on delay and 28ns turn-off delay, with a 12ns fall time. This surface mount component offers a maximum power dissipation of 52W and operates within a -55°C to 150°C temperature range.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIS427EDN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -50A |
| Drain to Source Resistance | 17.7mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.93nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10.6mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS427EDN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS427EDN-T1-GE3 to view detailed technical specifications.
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