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Technical Specifications
Vishay SIS430DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
35A
Drain to Source Resistance
5.6mR
Drain to Source Voltage (Vdss)
25V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
1.6nF
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
5.1mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
25ns
Turn-On Delay Time
20ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SIS430DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS430DN-T1-GE3 to view detailed technical specifications.
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