N-channel MOSFET, 40V Drain-Source Voltage (Vdss), 35A Continuous Drain Current (ID). Features low 7.6mΩ maximum Drain-Source On-Resistance (Rds On) and 9.2mΩ Drain to Source Resistance. Operates with a 2.2V Gate to Source Voltage (Vgs) threshold. Surface mountable in a TO-252-3 package, with 52W maximum power dissipation. RoHS compliant with fast switching times including 20ns fall time.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS434DN-T1-GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
35A
Drain to Source Resistance
9.2mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
7.6mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
2.2V
Height
1.17mm
Input Capacitance
1.53nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
7.6mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.2V
Turn-Off Delay Time
40ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIS434DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS434DN-T1-GE3 to view detailed technical specifications.
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