Quick Jump:
Technical Specifications
Vishay SIS435DNT-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 5.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 5.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.7W |
| Rds On Max | 5.4mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS435DNT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS435DNT-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.