N-channel MOSFET, 25V Vdss, 16A continuous drain current, and 4.5mR maximum drain-source on-resistance. Features low Rds(on) of 8.05mR, 150°C maximum operating temperature, and 27.7W maximum power dissipation. Surface mount component with 1.04mm height, 3.05mm length, and 3.05mm width. Includes 855pF input capacitance and fast switching times with 15ns turn-on and 10ns fall times. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS436DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 8.05mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 4.5mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 855pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 15ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS436DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS436DN-T1-GE3 to view detailed technical specifications.
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