The SIS444DN-T1-GE3 is a 1-channel N-Channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 52W and a maximum drain to source voltage of 30V. The device features a drain to source resistance of 2.6mR and a gate to source voltage of 20V. It is RoHS compliant and available in a surface mount package.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS444DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.065nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3.3mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS444DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS444DN-T1-GE3 to view detailed technical specifications.
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