N-Channel Power MOSFET featuring 40A continuous drain current and 40V drain-to-source voltage. Offers ultra-low 4.5mΩ drain-to-source resistance for efficient power handling. Designed with a 1-element silicon metal-oxide semiconductor structure, it operates within a temperature range of -55°C to 150°C and supports a gate-to-source voltage up to 20V. This RoHS and halogen-free component boasts a maximum power dissipation of 52W and is supplied in a leadless POWERPAK-8 package.
Resistance0.0055R
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS488DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Resistance | 0.0055R |
| RoHS Compliant | Yes |
| Series | SIS |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIS488DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS488DN-T1-GE3 to view detailed technical specifications.
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