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Technical Specifications
Vishay SiS782DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 7.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Power Dissipation | 41W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Series | SIS |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SiS782DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiS782DN-T1-GE3 to view detailed technical specifications.
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