The SiS782DN-T1-GE3 is a single N-channel MOSFET with a maximum drain to source voltage of 30V and continuous drain current of 16A. It features a drain to source resistance of 7.9 milliohms and a maximum power dissipation of 41 watts. The device has a fast switching time with a fall time of 9 nanoseconds and turn-off delay time of 14 nanoseconds. It is available in a tape and reel packaging with 3000 units per package. The SiS782DN-T1-GE3 is RoHS compliant and suitable for use in a variety of applications.
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| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 7.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Power Dissipation | 41W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Series | SIS |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
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