Vishay
SIS862DN-T1-GE3
Power Field-Effect Transistor, 40A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIS862DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
40A
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
60V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.32nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
8.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIS862DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS862DN-T1-GE3 to view detailed technical specifications.
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