N-channel MOSFET featuring 30V drain-source breakdown voltage and 40A continuous drain current. Offers low 2.15mΩ drain-source on-resistance at a nominal gate-source voltage of 1.1V. Designed for surface mount applications with a compact 0.124 x 0.124 inch footprint and 0.042 inch height. Includes fast switching characteristics with turn-on delay of 24ns and fall time of 20ns, supporting up to 52W power dissipation. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power52W
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Technical Specifications
Vishay SISA04DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.15mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.042inch |
| Input Capacitance | 3.595nF |
| Lead Free | Lead Free |
| Length | 0.124inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 2.15mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 24ns |
| Width | 0.124inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SISA04DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISA04DN-T1-GE3 to view detailed technical specifications.
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