N-Channel Power MOSFET featuring 30V drain-source voltage and 25A continuous drain current. Boasts a low 4.3mΩ Rds(on) for efficient power handling. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 28W. Surface mountable with 2.07nF input capacitance and a 1.1V threshold voltage. Packaged in tape and reel for automated assembly.
MountingSurface Mount
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Technical Specifications
Vishay SISA12ADN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 2.07nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 4.3mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.1V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SISA12ADN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISA12ADN-T1-GE3 to view detailed technical specifications.
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