N-channel MOSFET featuring 30V drain-source breakdown voltage and 25A continuous drain current. Offers low 4.3mΩ Rds(on) at 10V gate-source voltage, with 28W maximum power dissipation. Surface mount package with 2.07nF input capacitance and fast switching times, including 40ns turn-on and 45ns turn-off delays. Operates across a -55°C to 150°C temperature range.
Resistance0.0032R
MountingSurface Mount
PolarityN-CHANNEL
Power28W
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Technical Specifications
Vishay SISA12DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
25A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.3mR
Drain to Source Voltage (Vdss)
30V
Fall Time
20ns
Gate to Source Voltage (Vgs)
2.2V
Height
0.042inch
Input Capacitance
2.07nF
Length
0.124inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
28W
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
28W
Rds On Max
4.3mR
Reach SVHC Compliant
Unknown
Resistance
0.0032R
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
45ns
Turn-On Delay Time
40ns
Width
0.124inch
Compliance
RoHS
Compliant
Datasheet
Vishay SISA12DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISA12DN-T1-GE3 to view detailed technical specifications.
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