N-channel MOSFET featuring 30V drain-source breakdown voltage and 25A continuous drain current. Offers low 4.3mΩ Rds(on) at 10V gate-source voltage, with 28W maximum power dissipation. Surface mount package with 2.07nF input capacitance and fast switching times, including 40ns turn-on and 45ns turn-off delays. Operates across a -55°C to 150°C temperature range.
Resistance0.0032R
MountingSurface Mount
PolarityN-CHANNEL
Power28W
Quick Jump:
Technical Specifications
Vishay SISA12DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 2.2V |
| Height | 0.042inch |
| Input Capacitance | 2.07nF |
| Length | 0.124inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 28W |
| Rds On Max | 4.3mR |
| Reach SVHC Compliant | Unknown |
| Resistance | 0.0032R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 40ns |
| Width | 0.124inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SISA12DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISA12DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
