Vishay
SISA14DN-T1-GE3
Power Field-Effect Transistor, 20A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Resistance0.0051R
MountingSurface Mount
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Technical Specifications
Vishay SISA14DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.45nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 5.1mR |
| Resistance | 0.0051R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SISA14DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISA14DN-T1-GE3 to view detailed technical specifications.
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