Vishay
SISA18DN-T1-GE3
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Resistance0.0075R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SISA18DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 38.3A |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 2.4V |
| Input Capacitance | 1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 7.5mR |
| Resistance | 0.0075R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SISA18DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISA18DN-T1-GE3 to view detailed technical specifications.
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