P-channel MOSFET with 30V drain-source voltage and 50A continuous drain current. Features low 5.6mΩ drain-source resistance and 57W maximum power dissipation. Designed for surface mount applications with a PPAK 1212-8S package. Offers fast switching characteristics with 16ns turn-on delay and 20ns fall time. Operates across a wide temperature range from -55°C to 150°C.
MountingSurface Mount
PolarityP-CHANNEL
Power4.8W
Quick Jump:
Technical Specifications
Vishay SISS27DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
50A
Drain to Source Resistance
5.6mR
Drain to Source Voltage (Vdss)
30V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
830um
Input Capacitance
5.25nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
57W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
4.8W
Radiation Hardening
No
Rds On Max
5.6mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
16ns
Compliance
RoHS
Compliant
Datasheet
Vishay SISS27DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SISS27DN-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
