N-channel Power MOSFET featuring a dual configuration with a 20V drain-source voltage and 16A continuous drain current. This surface-mount component utilizes the PowerPAIR package, a 6-pin plastic housing with a 3.73mm x 6mm footprint and 0.75mm maximum height. It offers low on-resistance of 8.7mOhm (Channel 1) and 6.2mOhm (Channel 2) at 10V, with typical gate charges of 14.8nC (Channel 1) and 44nC (Channel 2) at 10V. Operating temperature range is -55°C to 150°C.
PackagePowerPAIR
MountingSurface Mount
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Technical Specifications
Vishay SiZ720DT-T1-GE3 technical specifications.
General
| Package Family Name | PowerPAIR |
| Package/Case | PowerPAIR |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3.73 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 16A |
| Maximum Drain Source Resistance | 8.7@10V@Channel 1|6.2@10V@Channel 2mOhm |
| Typical Gate Charge @ Vgs | 14.8@10V|[email protected]@Channel 1|44@10V|[email protected]@Channel 2nC |
| Typical Gate Charge @ 10V | 14.8@Channel 1|44@Channel 2nC |
| Typical Input Capacitance @ Vds | 825@10V@ Channel 1|2350@10V@Channel 2pF |
| Maximum Power Dissipation | 3900@Channel 1|4600@Channel 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiZ720DT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiZ720DT-T1-GE3 to view detailed technical specifications.
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