N-Channel MOSFET featuring 30V drain-source voltage and 40A continuous drain current. Offers low on-resistance of 1.75mR (typical) and 6.4mR (max) at 10V gate-source voltage. This dual-channel device boasts fast switching speeds with turn-on delay of 27ns and fall time of 10ns. Designed for surface mount applications with a compact 6mm x 5mm x 0.75mm package.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIZ916DT-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 1.75mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 2.4V |
| Height | 0.75mm |
| Input Capacitance | 1.208nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6.4mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 27ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIZ916DT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIZ916DT-T1-GE3 to view detailed technical specifications.
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