
N-channel Power MOSFET featuring TrenchFET technology, designed for surface mount applications. This dual-configuration component offers a maximum drain-source voltage of 30V and supports continuous drain currents of 22A and 32A per channel. Housed in an 8-pin PowerPAIR EP package with dimensions of 5mm x 6mm x 0.7mm, it operates across a temperature range of -55°C to 150°C. Key electrical characteristics include low drain-source on-resistance and controlled gate charge for efficient switching.
Vishay SIZ920DT-T1-GE3 technical specifications.
| Package/Case | PowerPAIR EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.7(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 22@Channel 1|32@Channel 2A |
| Maximum Gate Threshold Voltage | 2.5@Channel 1|2.2@Channel 2V |
| Maximum Drain Source Resistance | 7.1@10V@Channel 1|3@10V@Channel 2mOhm |
| Typical Gate Charge @ Vgs | 22.3@10V|[email protected]@Channel 1|60@10V|[email protected]@Channel 2nC |
| Typical Gate Charge @ 10V | 22.3@Channel 1|60@Channel 2nC |
| Typical Input Capacitance @ Vds | 1260@15V@Channel 1|3600@15V@Channel 2pF |
| Maximum Power Dissipation | 4300@Channel 1|5200@Channel 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Vishay SIZ920DT-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.