P-channel Power MOSFET featuring a 12V maximum drain-source voltage and 7.1A maximum continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a 3-pin SOT-23 (TO-236AB) lead-frame SMT package with gull-wing leads. Key electrical characteristics include a maximum drain-source on-resistance of 35mΩ at 4.5V and typical gate charge values of 15nC at 4.5V and 9nC at 2.5V. The surface-mount component offers a maximum power dissipation of 1250mW and operates within a temperature range of -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Vishay SMM2333CDS technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3.04(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1.02(Max) |
| Seated Plane Height (mm) | 1.12(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 12V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 7.1A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]|[email protected]nC |
| Typical Input Capacitance @ Vds | 1225@6VpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Vishay SMM2333CDS Datasheet
Download the complete datasheet for Vishay SMM2333CDS to view detailed technical specifications.
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