N-channel enhancement mode power MOSFET in a 6-pin SC-70 (SC-203AB) lead-frame SMT package. Features 20V drain-source voltage, ±12V gate-source voltage, and 0.78A continuous drain current. Offers a low 415mΩ drain-source resistance at 4.5V gate-source voltage and a typical gate charge of 0.8nC at 4.5V. Maximum power dissipation is 430mW, with an operating temperature range of -55°C to 175°C.
PackageSC-70
MountingSurface Mount
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Technical Specifications
Vishay SQ1902EL technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SC
Package/Case
SC-70
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Jedec
MO-203AB
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
0.78A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Maximum Power Dissipation
430mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
18612
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
Radiation Hardening
No
Datasheet
Vishay SQ1902EL Datasheet
Download the complete datasheet for Vishay SQ1902EL to view detailed technical specifications.
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