N-channel enhancement mode power MOSFET in a 6-pin SC-70 surface-mount package. Features a 20V drain-source voltage, 0.78A continuous drain current, and a low 415mOhm maximum drain-source resistance at 4.5V Vgs. Dual transistor configuration with gull-wing leads and a compact 2mm x 1.25mm footprint. Operates across a wide temperature range from -55°C to 175°C.
PackageSC-70
MountingSurface Mount
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Technical Specifications
Vishay SQ1902EL-T1-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SC
Package/Case
SC-70
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Jedec
MO-203AB
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
0.78A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
61@10VpF
Maximum Power Dissipation
430mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
18612
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
Radiation Hardening
No
Datasheet
Vishay SQ1902EL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ1902EL-T1-GE3 to view detailed technical specifications.
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