Vishay
SQ2325ES-T1_GE3
Small Signal Field-Effect Transistor, 0.84A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,
PackageTO-236
MountingSurface Mount
Power3W
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Technical Specifications
Vishay SQ2325ES-T1_GE3 technical specifications.
General
Package/Case
TO-236
Continuous Drain Current (ID)
1A
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
3W
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Vishay SQ2325ES-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQ2325ES-T1_GE3 to view detailed technical specifications.
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