Vishay
SQ2351ES-T1_GE3
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.168ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
PackageSOT
Resistance0.115R
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Technical Specifications
Vishay SQ2351ES-T1_GE3 technical specifications.
General
Package/Case
SOT
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
115mR
Lead Free
Lead Free
Resistance
0.115R
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Vishay SQ2351ES-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQ2351ES-T1_GE3 to view detailed technical specifications.
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