N-Channel Power MOSFET, 40V Drain-Source Voltage, 8A Continuous Drain Current, and 32mΩ maximum Drain-Source On-Resistance. Features include a 2V Threshold Voltage, 660pF Input Capacitance, and fast switching times with 8ns Turn-On Delay and 7ns Fall Time. This surface-mount device operates from -55°C to 175°C with a 5W maximum power dissipation. It is HALOGEN FREE and ROHS COMPLIANT, packaged in TSOP for tape and reel delivery.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SQ3418EEV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
48mR
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
660pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5W
Radiation Hardening
No
Rds On Max
32mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
15ns
Turn-On Delay Time
8ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQ3418EEV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ3418EEV-T1-GE3 to view detailed technical specifications.
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