P-Channel MOSFET, 40V Drain-Source Voltage, -7.4A Continuous Drain Current, 50mΩ Max Drain-Source On-Resistance. Features 5W Max Power Dissipation, 175°C Max Operating Temperature, and TSOP package for surface mounting. Includes 9ns Turn-On Delay Time and 10ns Fall Time. RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SQ3419EEV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
-7.4A
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
78mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
1.065nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.5V
Turn-Off Delay Time
26ns
Turn-On Delay Time
9ns
Weight
0.000705oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQ3419EEV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ3419EEV-T1-GE3 to view detailed technical specifications.
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