N-Channel Silicon TrenchFET® MOSFET for surface mount applications. Features a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 7A. Offers a low drain-source on-resistance (Rds On) of 42mΩ at a gate-source voltage (Vgs) of 2.5V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 5W. Packaged in TSOP with tape and reel for high-volume production. RoHS and Halogen Free compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQ3426EEV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
7A
Drain to Source Resistance
42mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
63mR
Fall Time
7ns
Gate to Source Voltage (Vgs)
2.5V
Input Capacitance
700pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
42mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
19ns
Turn-On Delay Time
9ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQ3426EEV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ3426EEV-T1-GE3 to view detailed technical specifications.
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