P-channel MOSFET with -60V drain-source voltage and -5.5A continuous drain current. Features 82mΩ drain-to-source resistance and 5W maximum power dissipation. Operates across a -55°C to 175°C temperature range. Surface mountable in a 6TSOP package, this RoHS compliant component offers fast switching with 10ns turn-on and 26ns turn-off delay times.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SQ3427EEV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
-5.5A
Drain to Source Resistance
82mR
Drain to Source Voltage (Vdss)
-60V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.125nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
82mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.5V
Turn-Off Delay Time
26ns
Turn-On Delay Time
10ns
Weight
0.000705oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQ3427EEV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ3427EEV-T1-GE3 to view detailed technical specifications.
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