N-channel, small-signal MOSFET featuring a 30V drain-source voltage and 8A continuous drain current. This surface-mount component offers a low 35mΩ drain-to-source resistance and operates within a -55°C to 175°C temperature range. Key performance characteristics include a 2V nominal gate-source voltage, 640pF input capacitance, and fast switching times with turn-on delay at 6ns and fall time at 7ns. Rated for 4W maximum power dissipation, this device is supplied in TSOP packaging and is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power4W
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Technical Specifications
Vishay SQ3456EV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
8A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
640pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
4W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
4W
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
10ns
Turn-On Delay Time
6ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQ3456EV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ3456EV-T1-GE3 to view detailed technical specifications.
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