N-channel Power MOSFET, 60V drain-source voltage, 16A continuous drain current. Features TrenchFET technology for low on-resistance (12mΩ @ 10V). 8-pin SOIC N package (5mm x 4mm x 1.55mm) with gull-wing leads for surface mounting. Operating temperature range from -55°C to 175°C.
PackageSOIC N
MountingSurface Mount
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Technical Specifications
Vishay SQ4470EY technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOIC N |
| Package Description | Small Outline IC Narrow Body |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4(Max) |
| Package Height (mm) | 1.55(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012 |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 16A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 12@10VmOhm |
| Typical Gate Charge @ Vgs | 45@10VnC |
| Typical Gate Charge @ 10V | 45nC |
| Typical Input Capacitance @ Vds | 2531@25VpF |
| Maximum Power Dissipation | 7100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SQ4470EY Datasheet
Download the complete datasheet for Vishay SQ4470EY to view detailed technical specifications.
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