N-channel MOSFET featuring 40V drain-source voltage and 20.7A continuous drain current. Offers low 9mΩ drain-to-source resistance and 7.1W maximum power dissipation. Designed for surface mounting in an 8-pin SO package, this component operates from -55°C to 175°C. Key switching characteristics include a 17.5ns turn-on delay and 9.5ns fall time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.56W
Quick Jump:
Technical Specifications
Vishay SQ4840EY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
20.7A
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
40V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
2.44nF
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.1W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.56W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
38ns
Turn-On Delay Time
17.5ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SQ4840EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ4840EY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
