N-channel MOSFET, 30V drain-source breakdown voltage, 7A continuous drain current, and 36mΩ drain-source resistance. Features 3.3W maximum power dissipation, 2 N-channel FETs, and a 2V threshold voltage. Operates from -55°C to 175°C with 830pF input capacitance. Surface mountable in an SO package, this RoHS compliant component offers fast switching with 9ns turn-on and 18ns turn-off delay times.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power3.3W
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Technical Specifications
Vishay SQ4936EY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 830pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.3W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQ4936EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ4936EY-T1-GE3 to view detailed technical specifications.
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