Dual N-Channel MOSFET, surface mount, featuring 40V Drain to Source Breakdown Voltage and 8A Continuous Drain Current. Offers low 20mR Drain to Source Resistance and 1.76nF Input Capacitance. Operates from -55°C to 175°C with a 4.4W Max Power Dissipation. Packaged in Tape and Reel, this RoHS compliant component is ideal for demanding applications.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power4.4W
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Technical Specifications
Vishay SQ4942EY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.76nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.4W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.4W |
| Rds On Max | 20mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQ4942EY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ4942EY-T1-GE3 to view detailed technical specifications.
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