Dual N-channel MOSFET, 60V Drain-Source Voltage, 4.5A Continuous Drain Current, and 55mΩ Rds On. Features a 1.7W maximum power dissipation and operates across a -55°C to 150°C temperature range. This surface mount component is housed in an 8-pin SOIC package, offering fast switching with turn-on delay times of 13ns and fall times of 11ns.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SQ4946EY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQ4946EY-T1-E3 Datasheet
Download the complete datasheet for Vishay SQ4946EY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
