N-channel enhancement mode power MOSFET, 60V drain-source voltage, 0.32A continuous drain current. Features 1300mΩ maximum drain-source resistance at 10V, 0.9nC typical gate charge at 4.5V, and 19pF typical input capacitance at 30V. Packaged in a 3-pin SOT-23 (TO-236AB) surface-mount plastic package with gull-wing leads, measuring 3.04mm x 1.4mm x 1.02mm. Operates from -55°C to 175°C with a maximum power dissipation of 500mW.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Vishay SQ7002K-T1-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3.04(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1.02(Max)
Seated Plane Height (mm)
1.12(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.32A
Maximum Drain Source Resistance
1300@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
19@30VpF
Maximum Power Dissipation
500mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SQ7002K-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQ7002K-T1-GE3 to view detailed technical specifications.
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