Vishay
SQA410EJ-T1-GE3
VISHAY SQA410EJ-T1-GE3 MOSFET Transistor, N Channel, 7.8 A, 20 V, 0.023 ohm, 4.5 V, 600 mV
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQA410EJ-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
7.8A
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
20V
Fall Time
8ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
485pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
13.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
28mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
21ns
Turn-On Delay Time
8ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQA410EJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQA410EJ-T1-GE3 to view detailed technical specifications.
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