
N-channel MOSFET, 60V drain-source voltage, 23A continuous drain current, and 31mΩ drain-source resistance. Features a TO-252-3 surface mount package, 2V threshold voltage, and 845pF input capacitance. Operates with a 20V gate-source voltage, offering fast switching with 8ns turn-on delay and 30ns turn-off delay. Maximum power dissipation is 37W, with an operating temperature range of -55°C to 175°C.
Vishay SQD23N06-31L-GE3 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 845pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SQD23N06-31L-GE3 to view detailed technical specifications.
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