Vishay
SQD25N06-22L_GE3
Power Field-Effect Transistor, 25A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQD25N06-22L_GE3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.975nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 62W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 22mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQD25N06-22L_GE3 Datasheet
Download the complete datasheet for Vishay SQD25N06-22L_GE3 to view detailed technical specifications.
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