Vishay
SQD25N06-22L_GE3
Power Field-Effect Transistor, 25A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SQD25N06-22L_GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
25A
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
22mR
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.975nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Max Power Dissipation
62W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
22mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQD25N06-22L_GE3 Datasheet
Download the complete datasheet for Vishay SQD25N06-22L_GE3 to view detailed technical specifications.
No datasheet is available for this part.