Vishay
SQD30N05-20L_GE3
Power Field-Effect Transistor, 30A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
PackageTO-252
MountingSurface Mount
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Technical Specifications
Vishay SQD30N05-20L_GE3 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
55V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Packaging
Tape and Reel
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
18ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQD30N05-20L_GE3 Datasheet
Download the complete datasheet for Vishay SQD30N05-20L_GE3 to view detailed technical specifications.
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