N-channel power MOSFET, 40V drain-source breakdown voltage, 42A continuous drain current, and 10mΩ maximum drain-source resistance. Features a 2V threshold voltage, 2.19nF input capacitance, and fast switching times with 7ns turn-on and 30ns turn-off delays. Operates within a -55°C to 175°C temperature range, with 71W maximum power dissipation. Surface mount DPAK package, halogen-free and RoHS compliant, supplied on tape and reel.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power71W
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Technical Specifications
Vishay SQD40N04-10A-GE3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
42A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
40V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.19nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
71W
Mount
Surface Mount
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
71W
Radiation Hardening
No
Rds On Max
10mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
30ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQD40N04-10A-GE3 Datasheet
Download the complete datasheet for Vishay SQD40N04-10A-GE3 to view detailed technical specifications.
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