P-channel enhancement mode power MOSFET in a TO-252AA package, designed for surface mounting. Features a 30V drain-source voltage rating and a continuous drain current capability of 50A. Offers a low drain-source on-resistance of 10mΩ at 10V Vgs. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 71W. The DPAK package measures 6.73mm(L) x 6.22mm(W) x 2.38mm(H).
PackageDPAK
MountingSurface Mount
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Technical Specifications
Vishay SQD45P03-12 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.38(Max)
Pin Pitch (mm)
2.28
Package Weight (g)
0.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
50A
Maximum Drain Source Resistance
10@10VmOhm
Typical Gate Charge @ Vgs
55.3@10VnC
Typical Gate Charge @ 10V
55.3nC
Typical Input Capacitance @ Vds
2794@15VpF
Maximum Power Dissipation
71000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
18612
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SQD45P03-12 Datasheet
Download the complete datasheet for Vishay SQD45P03-12 to view detailed technical specifications.
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