P-channel enhancement mode power MOSFET in a TO-252AA package, designed for surface mounting. Features a 30V drain-source voltage rating and a continuous drain current capability of 50A. Offers a low drain-source on-resistance of 10mΩ at 10V Vgs. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 71W. The DPAK package measures 6.73mm(L) x 6.22mm(W) x 2.38mm(H).
PackageDPAK
MountingSurface Mount
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Technical Specifications
Vishay SQD45P03-12 technical specifications.
General
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Pin Pitch (mm) | 2.28 |
| Package Weight (g) | 0.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 50A |
| Maximum Drain Source Resistance | 10@10VmOhm |
| Typical Gate Charge @ Vgs | 55.3@10VnC |
| Typical Gate Charge @ 10V | 55.3nC |
| Typical Input Capacitance @ Vds | 2794@15VpF |
| Maximum Power Dissipation | 71000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SQD45P03-12 Datasheet
Download the complete datasheet for Vishay SQD45P03-12 to view detailed technical specifications.
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