P-channel power MOSFET featuring a low 12mΩ drain-to-source resistance and a continuous drain current of -50A. This silicon, metal-oxide semiconductor FET operates with a drain-to-source voltage of -30V and a gate-to-source voltage up to 20V. Designed for surface mounting in a TO-252 package, it offers a maximum power dissipation of 71W and a maximum operating temperature of 175°C. The component boasts fast switching characteristics with turn-on delay of 11ns and fall time of 19ns, packaged on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SQD45P03-12_GE3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | -50A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.495nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQD45P03-12_GE3 Datasheet
Download the complete datasheet for Vishay SQD45P03-12_GE3 to view detailed technical specifications.
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