Vishay
SQD50N03-3M1L-GE3
VISHAY SQD50N03-3M1L-GE3 MOSFET Transistor, N Channel, 50 A, 30 V, 0.0027 ohm, 10 V, 2 V
PackageTO-252
MountingSurface Mount
Power136W
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Technical Specifications
Vishay SQD50N03-3M1L-GE3 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
50A
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.316nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Power Dissipation
136W
Radiation Hardening
No
Rds On Max
3.1mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
42ns
Turn-On Delay Time
10ns
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay SQD50N03-3M1L-GE3 Datasheet
Download the complete datasheet for Vishay SQD50N03-3M1L-GE3 to view detailed technical specifications.
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