N-channel MOSFET with 40V drain-source breakdown voltage and 50A continuous drain current. Features low 9mΩ Rds(on) at 10V/250A and 15mΩ Rds(on) at 4.5V/250A, with a 3.8V threshold voltage. Operates across a -55°C to 175°C temperature range, offering 83W maximum power dissipation. Packaged in DPAK for surface mounting, this component is RoHS compliant and supplied on tape and reel.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power83W
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Technical Specifications
Vishay SQD50N04-09H-GE3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
50A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
40V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.24nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Nominal Vgs
3.8V
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
83W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3.8V
Turn-Off Delay Time
23ns
Turn-On Delay Time
15ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQD50N04-09H-GE3 Datasheet
Download the complete datasheet for Vishay SQD50N04-09H-GE3 to view detailed technical specifications.
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